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TiN/Si3N4复合材料的磁控溅射制备及其电性能研究
Preparation of TiN/Si3N4 Composite Materials by Magnetron Sputtering and Investigation of Their Electric Properties
  
DOI:
中文关键词:  TiN;Si3N4;厚度;方阻
英文关键词:TiN;Si3N4 ; thickness of thin film; square resistance
基金项目:
作者单位
王守兴 山东工业陶瓷研究设计院有限公司,淄博 255031 
康立敏 山东工业陶瓷研究设计院有限公司,淄博 255031 
王再义 山东工业陶瓷研究设计院有限公司,淄博 255031 
魏美玲 山东工业陶瓷研究设计院有限公司,淄博 255031 
何子臣 山东工业陶瓷研究设计院有限公司,淄博 255031 
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中文摘要:
      利用直流反应磁控溅射法在Si3N4陶瓷基体上制备了TiN导电薄膜。采用X射线衍射仪(XRD)、扫描电镜(SEM)和电子能谱(EDS)对薄膜的物相组成以及表面形貌进行分析,表明TiN薄膜均匀,且与基体有较强的附着力。采用SZ82型四探针测试仪对薄膜进行了方阻随厚度变化的分析,表明薄膜的厚度对薄膜的电性能有很大的影响。
英文摘要:
      TiN thin films are deposited on Si3N4 substrates by reactive DC magnetron sputtering. The phase composition and surface morphology were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and Energy-dispersive X-ray spectroscopy (EDS). The results reveal that TiN films are with uniform surface morphology, and have strong adhesion with the substrates. The square resistance of the films is measured by SZ82 four-point probe measurement, and it is observed that the electrical characteristics of TiN films are correlated well with the film thickness.
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